Installation type | Base installation |
packing | bulk |
series | CoolMOS™ |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SP6 |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 833W |
FET Type | 2 N channels(half-bridge) |
Drain source voltage (Vdss) | 600V |
Current at 25 ° C - continuous drain (Id) | 143A |
On resistance (maximum) for different Ids and Vgs | 18 mΩ @ 71.5A,10V |
Vgs (th) (maximum) for different Ids | 3.9V @ 4mA |
Gate charge (Qg) at different Vgs (maximum) | 1036nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 28000pF @ 25V |
FET function | standard |